Nitrogen ion implantation effect on the physical properties of copper oxide thin films on glass substrate

Azadeh Jafari

One of the method for engineering the structural properties
of a metal oxide to modify its optical and electrical properties,
is nitrogen doping. In this context nitrogen doping in copper
oxide is a paramount research topic because of its potential
for surmounting the disadvantage of copper oxide its high
resistance. In this paper effect of nitrogen ion implantation
on copper oxide thin film deposited on glass substrate by DC
magnetron sputtering has been studied. In order to investigate
the effect of the nitrogen ion implantation on copper
oxide thin film, the crystallographic structure of the samples
was obtained utilizing X-ray diffraction method. Atomic force
microscopy and scanning electron microscopy were utilized
for surface morphology investigation and UV-VIS spectrophotometer
was utilized for optical properties. The XRD patterns
showed Cu2O:N formation with an orthorhombic structure in
implanted sample. The SEM images showed some paramount
vicissitude in the surface morphology after nitrogen ion implantation
in such a way that some interconnected apertures
engendered on the surface. According to the AFM images, the
roughness of the samples after implantation is decremented
and transmuted due to the ballistic effect of the ions implanted.
The study on optical properties showed that nitrogen ion
implantation promoted the delocalization of charge carriers as
a result, the optical band gap decremented. Another result of
nitrogen ion implantation was minimizing resistivity of samples
which the I-V characteristics was performed with keithley-
2361system. The results provide a subsidiary experimental instance
of N doped copper oxide synthesis and would promote
the research and applications of Cu2O:N contrivances such as
photovoltaic material systems.